BDX33B - Darlington Complementary Silicon Power Transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BDX33B
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	135.50 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDX33B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BDX33B	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS	ON Semiconductor
BDX33B	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	STMicroelectronics
BDX33B	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
BDX33B	NPN/PNP PLASTIC POWER TRANSISTORS	CDIL
BDX33B	NPN Silicon Power Darlingtons	MCC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
BDX34B	Darlington Complementary Silicon Power Transistors
BDX53B	Plastic Medium-Power Complementary Silicon Transistors
BDX53C	Plastic Medium-Power Complementary Silicon Transistors
BDX54B	Plastic Medium-Power Complementary Silicon Transistors
BDX54C	Plastic Medium-Power Complementary Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.