BDX34B - Darlington Complementary Silicon Power Transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BDX34B
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	135.50 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	BDX34B Datasheet

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BDX33B	Darlington Complementary Silicon Power Transistors
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.