BDX34B Datasheet and Specifications PDF

The BDX34B is a NPN Epitaxial Silicon Transistor.

Datasheet4U Logo
Part NumberBDX34B Datasheet
ManufacturerFairchild Semiconductor
Overview BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Bas. 34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C ICEO Collector Cut-off Current : BDX34 : BDX34A : BDX34B : BDX34C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX34/34A : BDX3.
Part NumberBDX34B Datasheet
DescriptionDARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Manufactureronsemi
Overview BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Cu.
* High DC Current Gain
* hFE = 2500 (typ.) at IC = 4.0
* Collector
*Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
*Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
* BDX33B, 33C/34B, 34C
* Monolith.
Part NumberBDX34B Datasheet
DescriptionDarlington Complementary Silicon Power Transistors
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • H. ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ.
Part NumberBDX34B Datasheet
Description(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS
ManufacturerTRANSYS
Overview SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junc. mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, >45 >60 >80 >100 >120 UNIT V >45 >45 <0.5 >60 >60 <0.5 >80 >80 <0.5 >100 >100 <0.5 >120 >120 <0.5 V V mA <10 <10 <10 <10 <10 .