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BDX34B Datasheet Darlington Complementary Silicon Power Transistors

Manufacturer: onsemi

Overview: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington plementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications.

BDX34B datasheet preview

Datasheet Details

Part number	BDX34B
Manufacturer	onsemi
File Size	86.97 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDX34B_ONSemiconductor.pdf

Key Features

High DC Current Gain.
hFE = 2500 (typ. ) at IC = 4.0.
Collector.
Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min).
BDX33B, BDX334B = 100 Vdc (min).
BDX33C, BDX334C.
Low Collector.
Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc.
BDX33B, 33C/34B, 34C.
Monolithic Construction with Build.
In Base.
Emitter Shunt Resistors.
These Devices are Pb.
Free a.

Similar Datasheet

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