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BDX33C Datasheet Darlington Complementary Silicon Power Transistors

Manufacturer: onsemi

Overview: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications.

BDX33C datasheet preview

Datasheet Details

Part number	BDX33C
Manufacturer	onsemi
File Size	81.40 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDX33C_ONSemiconductor.pdf

Key Features

High DC Current Gain.
hFE = 2500 (typ. ) at IC = 4.0.
Collector.
Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min).
BDX33B, BDX334B = 100 Vdc (min).
BDX33C, BDX334C.
Low Collector.
Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc.
BDX33B, 33C/34B, 34C.
Monolithic Construction with Build.
In Base.
Emitter Shunt Resistors.
These Devices are Pb.
Free a.

Similar Datasheet

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	BDX33C	NPN Silicon Power Darlingtons	MCC
	BDX33C	(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS	TRANSYS

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Part Number	Description
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