BDX33B Overview
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington plementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications.
BDX33B Key Features
- High DC Current Gain
- hFE = 2500 (typ.) at IC = 4.0
- Collector-Emitter Sustaining Voltage at 100 mAdc
- BDX33B, BDX334B = 100 Vdc (min)
- BDX33C, BDX334C
- Low Collector-Emitter Saturation Voltage
- BDX33B, 33C/34B, 34C
- Monolithic Construction with Build-In Base-Emitter Shunt Resistors
- These Devices are Pb-Free and are RoHS pliant
