BDX33B
BDX33B is DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS manufactured by onsemi.
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington plementary Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
- High DC Current Gain
- hFE = 2500 (typ.) at IC = 4.0
- Collector- Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min)
- BDX33B, BDX334B = 100 Vdc (min)
- BDX33C, BDX334C
- Low Collector- Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
- BDX33B, 33C/34B, 34C
- Monolithic Construction with Build- In Base- Emitter Shunt Resistors
- These Devices are Pb- Free and are RoHS pliant-
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C
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