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BDX33B Datasheet Darlington Complementary Silicon Power Transistors

Manufacturer: onsemi

Overview: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications.

BDX33B datasheet preview

Datasheet Details

Part number	BDX33B
Manufacturer	onsemi
File Size	81.40 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDX33B_ONSemiconductor.pdf

Key Features

High DC Current Gain.
hFE = 2500 (typ. ) at IC = 4.0.
Collector.
Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min).
BDX33B, BDX334B = 100 Vdc (min).
BDX33C, BDX334C.
Low Collector.
Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc.
BDX33B, 33C/34B, 34C.
Monolithic Construction with Build.
In Base.
Emitter Shunt Resistors.
These Devices are Pb.
Free a.

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More Datasheets from onsemi

Part Number	Description
BDX33C	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDX34B	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDX34C	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
BDX53B	Plastic Medium-Power Complementary Silicon Transistors
BDX53BG	Plastic Medium-Power Complementary Silicon Transistors
BDX53C	Plastic Medium-Power Complementary Silicon Transistors
BDX53CG	Plastic Medium-Power Complementary Silicon Transistors
BDX54B	Plastic Medium-Power Complementary Silicon Transistors
BDX54BG	Plastic Medium-Power Complementary Silicon Transistors
BDX54C	Plastic Medium-Power Complementary Silicon Transistors

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