BDX33B - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

onsemi

Key Features

High DC Current Gain.
hFE = 2500 (typ. ) at IC = 4.0.
Collector.
Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min).
BDX33B, BDX334B = 100 Vdc (min).
BDX33C, BDX334C.
Low Collector.
Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc.
BDX33B, 33C/34B, 34C.
Monolithic Construction with Build.
In Base.
Emitter Shunt Resistors.
These Devices are Pb.
Free a.

BDX33B darlington complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	BDX33B
Manufacturer	onsemi
File Size	81.40 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDX33B Datasheet

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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.