| Part Number | BDX33B Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • H. ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ. |
BDX33B Datasheet and Specifications PDF
The BDX33B is a Darlington Complementary Silicon Power Transistors.
| Part Number | BDX33B Datasheet |
|---|---|
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | onsemi |
| Overview |
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Cu.
* High DC Current Gain * hFE = 2500 (typ.) at IC = 4.0 * Collector *Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) * BDX33B, BDX334B = 100 Vdc (min) * BDX33C, BDX334C * Low Collector *Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc * BDX33B, 33C/34B, 34C * Monolith. |
| Part Number | BDX33B Datasheet |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Bas. BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C ICEO Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX33/34 : BDX33B/33C VCE(sat) * Colle. |
| Part Number | BDX33B Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configu.
ataSheet4U.co.kr/
NPN BDX33 * BDX33A * BDX33B * BDX33C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BD. |