Datasheet Summary
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
Darlington plementary Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
- High DC Current Gain
- hFE = 2500 (typ.) at IC = 4.0
- Collector- Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min)
- BDX33B, BDX334B = 100 Vdc (min)
- BDX33C, BDX334C
- Low Collector- Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
- BDX33B, 33C/34B, 34C
- Monolithic Construction with Build- In Base- Emitter Shunt Resistors
- These Devices are Pb- Free and are RoHS pliant-
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage BDX33B, BDX34B BDX33C, BDX34C
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