Part BDX34C
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Category Transistor
Manufacturer onsemi
Size 81.40 KB
onsemi
BDX34C

Overview

  • High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt Resistors
  • These Devices are Pb-Free and are RoHS Compliant*