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BDX34C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

General Description

The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.

They are intented for use in power linear and switching applications.

The complementary PNP types are BDX34B and BDX34C respectively.

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® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature BDX33B BDX34B 80 80 10 15 0.