BDX34C - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BDX34C
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	108.70 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	BDX34C Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BDX34C	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS	STMicroelectronics
BDX34C	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
BDX34C	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS	ON Semiconductor
BDX34C	NPN/PNP PLASTIC POWER TRANSISTORS	CDIL
BDX34C	(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS	TRANSYS

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.