BDX33C Datasheet

The BDX33C is a DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS.

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Part NumberBDX33C
Manufactureronsemi
Overview BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Cu.
* High DC Current Gain
* hFE = 2500 (typ.) at IC = 4.0
* Collector
*Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min)
* BDX33B, BDX334B = 100 Vdc (min)
* BDX33C, BDX334C
* Low Collector
*Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
* BDX33B, 33C/34B, 34C
* Monolith.
Part NumberBDX33C
Description(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS
ManufacturerTRANSYS
Overview SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junc. mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, >45 >60 >80 >100 >120 UNIT V >45 >45 <0.5 >60 >60 <0.5 >80 >80 <0.5 >100 >100 <0.5 >120 >120 <0.5 V V mA <10 <10 <10 <10 <10 .
Part NumberBDX33C
DescriptionNPN Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Bas. BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C ICEO Collector Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C IEBO hFE Emitter Cut-off Current * DC Current Gain : BDX33/34 : BDX33B/33C VCE(sat) * Colle.
Part NumberBDX33C
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Complement to Type BDX34C ·Minimum Lot-to-Lot variations for robust device performance and . gton Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 3V ICBO C.

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