Fairchild Semiconductor BDX33
NPN Epitaxial Silicon Transistor
| Part No. | BDX33 |
|---|---|
| Datasheet | BDX33 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
● High Gain General Purpose● Power Darlington TR
● Complement to BDX34/34A/34B/34C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 45 60 80 100 45 60 80 100 10 15 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC TJ TSTG ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDX33/A/B/CELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX...
