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Full PDF Text Transcription (Reference)
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BDX34/A/B/C
BDX34/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units
IC ICP IB PC TJ TSTG
©2000 Fairchild Semiconductor International
Rev.
BDX34 Datasheet
