Datasheet Details
| Part number | BDX33D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.36 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDX33D-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor BDX33D.
| Part number | BDX33D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.36 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDX33D-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.25 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website： www.iscsemi.com MAX UNIT 1.78 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX33D | NPN/PNP PLASTIC POWER TRANSISTORS | CDIL |
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BDX33D | NPN Silicon Power Darlingtons | MCC |
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BDX33D | (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS | TRANSYS |
 |
BDX33D | NPN Transistor | Bourns |
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BDX33 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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