| Part Number | BDX33D Datasheet |
|---|---|
| Manufacturer | TRANSYS |
| Overview | SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junc. mA, IB=0 IC=100mA, RBE=100 W IC=100mA, VBE=1.5V VCE=1/2rated VCEO, IB=0 Tc=100ºC VCE=1/2rated VCEO, IB=0 ICBO IE=0,VCB=Rated VCBO, Tc=100ºC IE=0,VCB=Rated VCBO, >45 >60 >80 >100 >120 UNIT V >45 >45 <0.5 >60 >60 <0.5 >80 >80 <0.5 >100 >100 <0.5 >120 >120 <0.5 V V mA <10 <10 <10 <10 <10 . |
BDX33D Datasheet PDF
The BDX33D is a (BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS.
| Part Number | BDX33D Datasheet |
|---|---|
| Description | NPN Silicon Power Darlingtons |
| Manufacturer | Micro Commercial Components |
| Overview | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BDX33 THRU BDX33D 0,9:708 • Lead Free Finish. . |
| Part Number | BDX33D Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 3A ·Complement to Type BDX34D . 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=. |
| Part Number | BDX33D Datasheet |
|---|---|
| Description | NPN/PNP PLASTIC POWER TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage . . |