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BDX33 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) High DC Current Gain : hFE= 750(Min) @IC= 4A Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 4A Complement to Type BDX34 Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Silicon NPN Darlington Power Transistor BDX33 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type BDX34 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 45 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.