BDX11 datasheet by Inchange Semiconductor.
| Part number | BDX11 |
|---|---|
| Datasheet | BDX11-INCHANGE.pdf |
| File Size | 174.41 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDX11 | Bipolar NPN Device | Seme LAB |
View all Inchange Semiconductor datasheets
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|---|---|
| BDX12 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |
