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BDX11 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power ampli

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 140 V 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 15 A 117 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.