Datasheet4U Logo Datasheet4U.com

BDX11 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – BDX11

Datasheet Details

Part number BDX11
Manufacturer INCHANGE
File Size 174.41 KB
Description NPN Transistor
Datasheet download datasheet BDX11 Datasheet
Additional preview pages of the BDX11 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 1

📁 Similar Datasheet

  • BDX10 - Bipolar NPN Device (Seme LAB)
  • BDX12 - Bipolar NPN Device (Seme LAB)
  • BDX14A - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BDX14AA - PNP Silicon Transistor (Seme LAB)
  • BDX16A - Bipolar PNP Device (Seme LAB)
  • BDX18 - SILICON POWER TRANSISTOR (SavantIC)
  • BDX18N - PNP Silicon Transistor (Comset Semiconductors)
  • BDX20 - Silicon PNP Power Transistor (Inchange Semiconductor)
Other Datasheets by INCHANGE
Published: |