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PNP Epitaxial Silicon Bipolar Transistor
BDX14A
Hermetic TO-66 Metal Package Ideal For General Purpose Low Frequency Switching Applications High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VCER
Collector - Emitter Voltage
RBE = 100Ω
VCEX
Collector - Base Voltage
VBE = +1.5V
VEBO
Emitter - Base Voltage
IC
Continuous Collector Current
IB
Base Current
PD
Total Power Dissipation
TC = 25°C
Derate Above 25°C
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
-90V -55V -60V -90V -7V -4A -2A 21.87W 0.125W/°C -55 to +200°C -65 to +200°C
Max.
BDX14A Datasheet
