BDX18 Overview
Key Specifications
Max Operating Temp: 200 °C
Description
With TO-3 package - High switching speed APPLICATIONS - LF large signal power amplification - Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -7 -15 -7 117 -65~200 -65~200 UNIT V V V A A W SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX18 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-0.2A ; IB=0 IE=-1mA ; IC=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-4V VCE=-90V;VBE=1.5V VCE=-60V;VBE=1.5V;TC=150 VEB=-7V; IC=0 IC=-4A ; VCE=-4V IC=-1A ; VCE=-10V;f=1MHz 20 4 MIN -60 -7 -1.1 -1.8 -5 -10 -5 70 MHz TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR) EBO VCEsat VBE ICEX IEBO hFE fT 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX18 Fig.2 Outline dimensions 3.
