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BDX18 - PNP Transistor

General Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC= -4A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching an

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isc Silicon PNP Power Transistors BDX18 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.