Datasheet Details
| Part number | BDX14 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | PNP Transistor |
| Datasheet | BDX14-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor BDX14.
| Part number | BDX14 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.18 KB |
| Description | PNP Transistor |
| Datasheet | BDX14-INCHANGE.pdf |
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·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~20 0 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX14A | Silicon PNP Power Transistor | Inchange Semiconductor |
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BDX14A | PNP Epitaxial Silicon Bipolar Transistor | TT |
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BDX14AA | PNP Silicon Transistor | Seme LAB |
| Part Number | Description |
|---|---|
| BDX11 | NPN Transistor |
| BDX12 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |