Inchange Semiconductor BDX13
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDX13 |
|---|---|
| Datasheet | BDX13 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●DC Current Gain-hFE=15-60@IC = 8A
●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for general-purpose switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BDX13ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitt...