BDX13 - NPN Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area DC Current Gain-hFE=15-60@IC = 8A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A 100% avalanche tested

Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Designed for gen

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BDX13 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BDX13
Manufacturer	Inchange Semiconductor
File Size	190.93 KB
Description	NPN Transistor
Datasheet	BDX13 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.