BDX13 Overview
·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BDX13 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...