Datasheet4U Logo Datasheet4U.com

BDX12 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested

and reliable operation.

Designed for applic

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDX12 Bipolar NPN Device Seme LAB
BDX10 Bipolar NPN Device Seme LAB
BDX11 Bipolar NPN Device Seme LAB
BDX14A Silicon PNP Power Transistor Inchange Semiconductor
BDX14A PNP Epitaxial Silicon Bipolar Transistor TT

Other Datasheets by Inchange Semiconductor

Part Number Description
BDX11 NPN Transistor
BDX13 NPN Transistor
BDX14 PNP Transistor
BDX16 PNP Transistor
BDX18 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.