Inchange Semiconductor BDX12
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDX12 |
|---|---|
| Datasheet | BDX12 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min)●Excellent Safe Operating Area
●Low Collector-Emitter Saturation Voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switchesABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 100 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise speci...