Datasheet Details
| Part number | BDX16 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.79 KB |
| Description | PNP Transistor |
| Datasheet | BDX16-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor BDX16.
| Part number | BDX16 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.79 KB |
| Description | PNP Transistor |
| Datasheet | BDX16-INCHANGE.pdf |
|
|
|
·Contunuous Collector Current-IC= -3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCER Collector-Emitter Voltage RBE= 100Ω -150 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~20 0 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX16 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX16A | Bipolar PNP Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDX11 | NPN Transistor |
| BDX12 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |