Datasheet Details
| Part number | BDX24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.36 KB |
| Description | NPN Transistor |
| Datasheet | BDX24-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BDX24.
| Part number | BDX24 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.36 KB |
| Description | NPN Transistor |
| Datasheet | BDX24-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
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|---|---|
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| BDX12 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
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| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |