Datasheet Details
| Part number | BDX20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BDX20_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | BDX20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.14 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BDX20_InchangeSemiconductor.pdf |
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·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF large signal power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEX Collector-Emitter Voltage- VBE= 1.5V -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 117 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W BDX20 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX20 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX20 | Bipolar PNP Device | Seme LAB |
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