| Part Number | BDX20 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI. unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB= 0 -140 V VCEX Collector-Emitter Breakdown Voltage IC= -100mA ; VBE= 1.5V -160 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.. |
BDX20 Datasheet and Specifications PDF
The BDX20 is a Silicon PNP Power Transistor.
| Part Number | BDX20 Datasheet |
|---|---|
| Description | Bipolar PNP Device |
| Manufacturer | Seme LAB |
| Overview | BDX20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.. package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 5526. |
| Part Number | BDX20 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | PNP BDX20 SILICON TRANSISTORS EPITAXIAL BASE The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection Compliance to RoHS.. eakdown Voltage (*) Collector Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Static Forward Current Transfer Ratio (*) Collector-Emitter Saturation Voltage (*) Base-Emitter Voltage (*) Transition Frequency Test Condition(s) IC=-200 mA, IB=0 IC=-100 mA, VBE=1.5 V VCE=-140 V. |