BDX20 Description
·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF large signal power amplification. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX20 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.