Datasheet4U Logo Datasheet4U.com

BDX36 - NPN Transistor

BDX36 Description

isc Silicon NPN Power Transistor BDX36 .
High Current Capability-IC= 5A(DC). DC Current Gain. : hFE = 45-450(Min) @ IC= 0. Collector-Emitter Breakdown Voltage- : V(BR.

BDX36 Applications

* High-current switching in power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 1

📥 Download Datasheet

Preview of BDX36 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BDX36
Manufacturer
INCHANGE
File Size
207.42 KB
Datasheet
BDX36-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • BDX30 - PNP SILICON PLANAR TRANSISTORS (Siemens Semiconductor Group)
  • BDX33 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX33A - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX33B - Darlington Complementary Silicon Power Transistors (Motorola Inc)
  • BDX33C - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (STMicroelectronics)
  • BDX33D - NPN/PNP PLASTIC POWER TRANSISTORS (CDIL)
  • BDX34 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
  • BDX34A - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE BDX36-like datasheet

BDX36 Stock/Price