BUY82
Seme LAB
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Npn silicon planar epitaxial transistor.
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BUY81 - Bipolar NPN Device
(Seme LAB)
BUY81
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. .
BUY82 - NPN Transistor
(Seme LAB)
BUY82
MECHANICAL DATA Dimensions in mm(Inches)
8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETIC.
BUY87 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY87
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min) ·High Switching Speed ·Excellent S.
BUY89 - Bipolar NPN Device
(Seme LAB)
BUY89
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BUY89 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·Minimum Lot-to-Lot .
BUY06CS23K-01 - 60V Radiation Hard power MOSFET
(Infineon)
BUY06CS23K-01
60V Radiation Hard power MOSFET
BUY06CS23K-01(ES)
Features
Low RDS(on)
Single Event Effect (SEE) hardened
LET 95, Range: 86µm (.
BUY12 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 80V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot var.
BUY15CS23K-01 - 150V Radiation Hard power MOSFET
(Infineon)
BUY15CS23K-01
150V Radiation Hard power MOSFET
BUY15CS23K-01(ES)
Features
Low RDS(on)
Single Event Effect (SEE) hardened
LET 73, Range: 253µm.
BUY18S - Bipolar NPN Device
(Seme LAB)
BUY18S
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BUY18S - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation Volt.
