BUY92
Seme LAB
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Bipolar pnp device.
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BUY90 - Bipolar PNP Device
(Seme LAB)
..
BUY90
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed.
BUY94 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY94
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min) ·High Switching Speed ·Excellent S.
BUY06CS23K-01 - 60V Radiation Hard power MOSFET
(Infineon)
BUY06CS23K-01
60V Radiation Hard power MOSFET
BUY06CS23K-01(ES)
Features
Low RDS(on)
Single Event Effect (SEE) hardened
LET 95, Range: 86µm (.
BUY12 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 80V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot var.
BUY15CS23K-01 - 150V Radiation Hard power MOSFET
(Infineon)
BUY15CS23K-01
150V Radiation Hard power MOSFET
BUY15CS23K-01(ES)
Features
Low RDS(on)
Single Event Effect (SEE) hardened
LET 73, Range: 253µm.
BUY18S - Bipolar NPN Device
(Seme LAB)
BUY18S
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BUY18S - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation Volt.
BUY20 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY20
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 120V(Min.) ·Excellent Safe Operating Area ·High .
BUY21 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY21
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 180V(Min.) ·Excellent Safe Operating Area ·High .
BUY22 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BUY22
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 230V(Min.) ·Excellent Safe Operating Area ·High .
