* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 16 dB MINIMUM APPLICATIONS
* HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase =
D1004UK
Seme LAB
131.85 KB
Metal gate rf silicon fet.
TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D ( 2 p ls )
B
C E
!
A
G
$
#
"
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF .
📁 Related Datasheet
D1004 - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8.
D10040180GT - GaAs Power Doubler
(PDI)
..
Product Specification
D10040180GT
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • .
D10040180GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D10040180GTH
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC
FEATURES
• • •.
D10040200GT - Product Specification
(PDI)
..
Product Specification
D10040200GT
GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • .
D10040200GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D10040200GTH
GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC
FEATURES.
D10040200PL1 - 45-1000MHz GaAs/GaN PWR DBLR HYBRID
(RF Micro Devices)
D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid
D10040200PL1
45-1000MHz GaAs/GaN PWR DBLR HYBRID
Package: SOT-115J
..
Product Desc.
D10040220GT - GaAs Power Doubler
(PDI)
..
Product Specification
D10040220GT
GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • .
D10040220GTH - GaAs Power Doubler
(PDI)
..
Product Specification
D10040220GTH
GaAs Power Doubler, 40 – 1000MHz, 22.5dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC
FEATURES.
