* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* USEFUL PO AT 1GHz
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase
D1016UK
Seme LAB
71.49 KB
Metal gate rf silicon fet.
TetraFET D1016UK MECHANICAL DATA B H C 23 G 1 AD E 54 P F METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W
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