Part number:
D1208UK
Manufacturer:
Seme LAB
File Size:
111.95 KB
Description:
Metal gate rf silicon fet
D1208UK
Seme LAB
111.95 KB
Metal gate rf silicon fet
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tca
📁 Related Datasheet
D1208 - METAL GATE RF SILICON FET
(Seme LAB)
.
D1200 - NPN Silicon Transistor
(ROHM)
.
D12000W - Standard Recovery Diode
(nELL)
SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pul.
D1201 - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201A - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
D1201B - Rectifiers
(RCA)
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~ File No.495
ffilCIBLJD
Solid State Division
Rectifiers D1201 Series
i-A, 50-to-i000-Y Sili.
