* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (
D1211UK
Seme LAB
112.10 KB
Metal gate rf silicon fet.
TetraFET
D1211UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
8
D
7
6
5
A
N
1
2
CB
P
3
4
H
GOLD METALLISED MULTI-PURPOSE.
📁 Related Datasheet
D1210 - METAL GATE RF SILICON FET
(Seme LAB)
SHINDENGEN
Schottky Rectifiers (SBD)
Modules
D120SC4M
40V 120A
FEATURES
OUTLINE DIMENSIONS
Case : Modules
Unit : mm
•œ High capacity modules
•œ Low.
D1210UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1210UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2 D
3 E
F
G
HK
PIN 1 PIN 3
SOURCE SOURCE
IJ
DA
PIN 2.
D1212 - 2SD1212
(Sanyo)
Ordering number:990C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB903/2SD1212
30V/12A High-Speed Switching Applications
Applications
· Suitable f.
D121212S-1W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
D******(N)S-1W Series
1600VDC Isolated 1W Double Output SIP-Package
Features
RoHS pliant Efficiency up to 80%
1.6kVDC Isolation D.
D121212S-2W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
D******S-2W Series
1600VDC Isolated 2W Double Output SIP-Package
Features
RoHS pliant Efficiency up to 83%
1.6kVDC Isolation Doub.
D1212UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1212UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls)
C
G
(t yp )
2
3
1
E
AD
5
4
I F
GOLD METALLISED MULT.
D1213 - 2SD1213
(Sanyo)
Ordering number:1022A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applications
Applications
· Large cur.
D1213A-01LP4 - 1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
(Diodes)
NEW PRODUCT
D1213A-01LP4
1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features
• IEC 61000-4-2 (ESD): Air ±15kV, Contact ±8kV • 1 Channel of ESD Protec.
