* PI N OH
* SIMPLIFIED AMPLIFIER DESIGN PIN 1 PIN 3 PIN 5 PIN 7 DD SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 SOURCE (COMMON) PIN 6 GATE 1 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) DIM mm A 9.14 B 12.70 C 45° D 6.86 E 0.76 F 9.78 G 19.05 H 4.19 I 3.17 J 1.52R
D1218UK
Seme LAB
30.01 KB
Metal gate rf silicon fet.
TetraFET
D1218UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B A
E
C
(2 pls)
K
12 34
FG
87 65 J Typ .
D M Q
GOLD METALLISED MU.
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D1210 - METAL GATE RF SILICON FET
(Seme LAB)
SHINDENGEN
Schottky Rectifiers (SBD)
Modules
D120SC4M
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OUTLINE DIMENSIONS
Case : Modules
Unit : mm
•œ High capacity modules
•œ Low.
D1210UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1210UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A
B C
1
4 M
2 D
3 E
F
G
HK
PIN 1 PIN 3
SOURCE SOURCE
IJ
DA
PIN 2.
D1211UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1211UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
8
D
7
6
5
A
N
1
2
CB
P
3
4
H
GOLD METALLISED MULTI-PURPOSE.
D1212 - 2SD1212
(Sanyo)
Ordering number:990C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB903/2SD1212
30V/12A High-Speed Switching Applications
Applications
· Suitable f.
D121212S-1W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
D******(N)S-1W Series
1600VDC Isolated 1W Double Output SIP-Package
Features
RoHS pliant Efficiency up to 80%
1.6kVDC Isolation D.
D121212S-2W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
D******S-2W Series
1600VDC Isolated 2W Double Output SIP-Package
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RoHS pliant Efficiency up to 83%
1.6kVDC Isolation Doub.
D1212UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1212UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls)
C
G
(t yp )
2
3
1
E
AD
5
4
I F
GOLD METALLISED MULT.
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(Sanyo)
Ordering number:1022A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applications
Applications
· Large cur.
