D2009UK Datasheet (Seme LAB) - METAL GATE RF SILICON FET

D2009UK, METAL GATE RF SILICON FET

TetraFET D2009UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GHz PUSH PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol.

0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0

D2009UK Features

* SIMPLIFIED AMPLIFIER DESIGN

* SUITABLE FOR BROAD BAND APPLICATIONS

* VERY LOW Crss

* SIMPLE BIAS CIRCUITS

* LOW NOISE

* HIGH GAIN

* 10 dB MINIMUM APPLICATIONS

* VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tc