Datasheet4U Logo Datasheet4U.com

D2014UK - RF Silicon Mosfet

📥 Download Datasheet

Preview of D2014UK PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number D2014UK
Manufacturer TT
File Size 276.40 KB
Description RF Silicon Mosfet
Datasheet download datasheet D2014UK-TT.pdf

D2014UK Product details

Description

Single-Ended RF Silicon Mosfet. Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 17.5W 65V +20V 1A -65 to +150°C 200°C MAX UNITS 10.0 °C/W General Note TT Electro

Features

📁 D2014UK Similar Datasheet

  • D2010UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2011UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2012 - NPN Silicon Power Transistor (STMicroelectronics)
  • D2012UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2013UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2015UK - METAL GATE RF SILICON FET (Seme LAB)
  • D2016 - 2SD2016 (Allegro)
  • D2016UK - METAL GATE RF SILICON FET (Seme LAB)
Other Datasheets by TT
Published: |