D2016 Datasheet (Allegro)

D2016, 2SD2016

www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE= 0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF 13.0min Equivalent circuit B C (2k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2S