D2016 Datasheet - Allegro

D2016 2SD2016

www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE= 0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF 13.0min Equivalent circuit B C (2k Ω) (200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2S.

D2016 Datasheet (49.34 KB)

D2016 Datasheet Preview — Preview of D2016 PDF

Datasheet Details

Part number:

D2016

Manufacturer:

Allegro

File Size:

49.34 KB

Description:

2sd2016.

📁 Related Datasheet

D2010UK METAL GATE RF SILICON FET (Seme LAB)

D2011UK METAL GATE RF SILICON FET (Seme LAB)

D2012 NPN Silicon Power Transistor (STMicroelectronics)

D2012 Si NPN Transistor (Wuxi Youda Electronics)

D2012 2SD2012 (Toshiba Semiconductor)

D2012UK METAL GATE RF SILICON FET (Seme LAB)

D2013UK METAL GATE RF SILICON FET (Seme LAB)

D2014UK RF SILICON FET (Seme LAB)

TAGS

D2016 2SD2016 Allegro

D2016 Distributor