* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 10 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (T
D2016UK
Seme LAB
27.28 KB
Metal gate rf silicon fet.
TetraFET
D2016UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B (2 pls)
E
A
C2
3
1
5
4
G (4 pls) F
K D
PIN 1 PIN 3 PIN 5
HJ
.
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2SD2016
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V.
D2010UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2010UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS .
D2011UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D B E
8 1 7 6 3 4 2
A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
D2012 - NPN Silicon Power Transistor
(STMicroelectronics)
®
2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS s GENERAL.
D2012 - Si NPN Transistor
(Wuxi Youda Electronics)
..
YOUDA TRANSISTOR
Si NPN TRANSISTOR¡ª
DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A .
D2012 - 2SD2012
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: .
D2012UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS .
D2013UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2013UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W.
