D2016
..
Darlington
2SD2016 s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) VBE(sat) f T COB Conditions VCB=200V VEB=6V IC=10m A VCE=4V, IC=1A IC=1A, IB=1.5m A IC=1A, IB=1.5m A VCE=12V, IE=- 0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz p F
13.0min
Equivalent circuit
(2k Ω) (200 Ω) E
Silicon NPN Triple Diffused Planar Transistor s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2016 200 200 6 3 0.5 25(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
Application : Igniter, Relay and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
16.9±0.3 8.4±0.2 m A
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
3.9 B C E
- V CE Characteristics (Typical)
A m A
V CE ( sat )
- I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
- V BE Temperature Characteristics (Typical)
3 (V...
