Datasheet4U Logo Datasheet4U.com

D2014UK - RF Silicon Mosfet

General Description

Single-Ended RF Silicon Mosfet.

Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum O

Key Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D2014UK RF SILICON FET Seme LAB
D2010UK METAL GATE RF SILICON FET Seme LAB
D2011UK METAL GATE RF SILICON FET Seme LAB
D2012 NPN Silicon Power Transistor STMicroelectronics
D2012 Si NPN Transistor Wuxi Youda Electronics

Other Datasheets by TT Electronics

Part Number Description
D2015UK RF Silicon Mosfet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF Silicon Mosfet 2.5W 500MHz 28V Single-Ended D2014UK Features: • Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 13dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 2.5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 17.5W 65V +20V 1A -65 to +150°C 200°C MAX UNITS 10.