Seme LAB D2014UK
RF SILICON FET
MECHANICAL DATA
A B C H I EF ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED O K MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 500MHz JL SINGLE ENDED G (4 PLS) N D (2 PLS) SOT 171 PIN 1 SOURCE PIN 2 SOURCE M PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE DIM mm A 10.92 B 5.84 C 2.54 D 3.30 dia E 9.14 F 3.05 G 2.01 H 1.04 I 18.42 J 24.77 K 2.74 L 9.14 M 4.19 N 0.13 O 7.11 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0.041 0.725 0.975 0.108 0.360 0.165 0.005 0.280 Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAXFEATURES
● SIMPLIFIED AMPLIFIER DESIGN● SUITABLE FOR BROAD BAND
APPLICATIONS
● LOW Crss● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
● VHF/UHF COMMUNICATIONS from DC to 1 GHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 17.5W BVDSS Drain – Source Breakdown Voltage 65V B...