• Part: D2017UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 39.58 KB
Download D2017UK Datasheet PDF
Seme LAB
D2017UK
FEATURES D ( 2 p ls ) - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - SIMPLE BIAS CIRCUITS DRAIN PIN 1 PIN 3 SOURCE GATE PIN 2 - LOW NOISE - HIGH GAIN - 13 d B MINIMUM mm 16.51 6.35 45° 1.52 6.35 0.13 3.56 0.64 Tol. 0.25 0.13 5° 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.060 0.250 0.005 0.140 0.024 Tol. 0.010 0.005 5° 0.005 0.005 0.001 0.020 0.005 DIM A B C D E F G H APPLICATIONS - VHF/UHF MUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 65V ±20V 2A - 65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press....