D2013UK
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
G (4 pls)
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
PIN 1 PIN 3 PIN 5 SOURCE (MON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2
- HIGH GAIN
- 10 d B MINIMUM
APPLICATIONS
- HF/VHF/UHF MUNICATIONS from 1MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj
- Per Side Semelab plc. Power Dissipation Drain
- Source Breakdown Voltage
- Gate
- Source Breakdown Voltage
- Drain Current
- Storage Temperature Maximum Operating Junction Temperature 83W 65V ±20V 4A
- 65 to 150°C 200°C
Telephone +44(0)1455...
