Part number:
D2012UK
Manufacturer:
Seme LAB
File Size:
53.89 KB
Description:
Metal gate rf silicon fet
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
![]() |
TT Electronics Power and Hybrid / Semelab Limited | D2012UK | RF POWER TRANSISTOR | Richardson RFPD | 0 | 0 |
$0
|
D2012UK
Seme LAB
53.89 KB
Metal gate rf silicon fet
* SIMPLIFIED AMPLIFIER DESIGN M I E K G
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° T
📁 Related Datasheet
D2012 - NPN Silicon Power Transistor
(STMicroelectronics)
®
2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS s GENERAL.
D2012 - Si NPN Transistor
(Wuxi Youda Electronics)
..
YOUDA TRANSISTOR
Si NPN TRANSISTOR¡ª
DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A .
D2012 - 2SD2012
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: .
D2010UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2010UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS .
D2011UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2011UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D B E
8 1 7 6 3 4 2
A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
D2013UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2013UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A K
B (2 pls) E
C 1
2
3
D 5 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W.