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D2017M - FTD2017M

Datasheet Summary

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Datasheet Details

Part number D2017M
Manufacturer Sanyo Semicon Device
File Size 72.08 KB
Description FTD2017M
Datasheet download datasheet D2017M Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm 2✕0.8mm) Conditions Ratings 20 ±12 6 40 1.2 1.
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