D2013UK Datasheet - Seme LAB

D2013UK METAL GATE RF SILICON FET

D2013UK Features

* SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N

* SUITABLE FOR BROAD BAND APPLICATIONS

* VERY LOW Crss

* SIMPLE BIAS CIRCUITS

* LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.5

Datasheet Details

D2013UK

Seme LAB

58.88 KB

Metal gate rf silicon fet.

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D2013UK METAL GATE SILICON FET Seme LAB

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