Description
TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
Features
* I P H G
DBC1 Package
PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source
DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13
PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source
Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.
Applications
* LOW Crss
* LOW NOISE
* HIGH GAIN
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain
* Source Breakdown Voltage Gat