IRF9130 Datasheet - Seme LAB

IRF9130 P-Channel Power MOSFET

IRF9130 Features

* 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2

* 100V

* 11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060)

* HERMETICALLY SEALED TO

* 3 METAL PACKAGE

* SIMPLE DRIVE REQUI

Datasheet Details

IRF9130

Seme LAB

19.16 KB

P-channel power mosfet.

📁 Related Datasheet

IRF9130 P-Channel Power MOSFET (Samsung semiconductor)

IRF9130 P-Channel Power MOSFET (Intersil Corporation)

IRF9130 P-Channel Power MOSFET (International Rectifier)

IRF9130SMD P-Channel Power MOSFET (Seme LAB)

IRF9131 P-Channel Power MOSFET (Samsung semiconductor)

IRF9132 P-Channel Power MOSFET (Samsung semiconductor)

IRF9133 P-Channel Power MOSFET (Samsung semiconductor)

IRF9140 P-Channel Power MOSFET (Seme LAB)

IRF9140 P-Channel Power MOSFET (Intersil Corporation)

IRF9140 (IRF9140 - IRF9143) P-Channel Power MOSFETs (Samsung Electronics)

TAGS

IRF9130 P-Channel Power MOSFET Seme LAB

Image Gallery

IRF9130 Distributor